TRANSITION-METAL IMPURITIES AND BAND OFFSETS IN WIDE-GAP II-VI SEMICONDUCTORS - ZN1-XMNXSENI) COMPOUNDS

Authors
GALAKHOV VR SURKOVA TP SOKOLOVA VI KURMAEV EZ ZUBRAGEL C UNLU H NEUMANN M PERMOGOROV SA TENISHEV LN
Citation
Vr. Galakhov et al., TRANSITION-METAL IMPURITIES AND BAND OFFSETS IN WIDE-GAP II-VI SEMICONDUCTORS - ZN1-XMNXSENI) COMPOUNDS, Solid state communications, 91(4), 1994, pp. 279-282
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
4
Year of publication
1994
Pages
279 - 282
Database
ISI
SICI code
0038-1098(1994)91:4<279:TIABOI>2.0.ZU;2-G
Abstract
Zn1-xMnxSe(Ni) solid solutions have been analysed by absorption, refle ctivity and resonant photoemission measurements. Valence band offsets for the compounds with different Mn concentrations were estimated from the threshold energy homega(th)BAR of the photoionization of Ni2+ ion s as well as from photoemission spectra. The contribution of the Mn3d derived states to the valence band was determined.