PHOTOCONDUCTIVITY IN POLY(BIPHENYLMETHYL SILYLENE)

Quantum yields of charge carrier formation, phi(cc), in poly(biphenylm ethyl silylene), PBMSi, and poly(methylphenyl silylene), PMPSi, have b een determined at 23-degrees-C with the aid of the xerographic dischar ge method. At F = 1 x 10(8) V/m and lambda(inc) = 330-360 nm: phi(cc) = 0.10 (PBMSi) and phi(cc) = 0.03 (PMPSi). Upon the addition of 2,3,5, 6-tetrachlorobenzoquinone (chloranil) at c = 3 mol %, to the polysilyl ene films, the quantum yields were increased: phi(cc) = 0.21 (PBMSi) a nd phi(cc) = 0.13 (PMPSi). The mobility of charge carriers mu in PBMSi is about one order of magnitude lower than in PMPSi. Upon addition of 3 mol % chloranil to PBMSi mu increased slightly.