MOSFET THERMAL NOISE MODELING FOR ANALOG INTEGRATED-CIRCUITS

The effects of device geometry, oxide thickness and bias condition on the thermal noise of MOSFET's are investigated. The experimental resul ts show that the conventional MOSFET thermal noise models do not accur ately predict the thermal noise of MOSFET's. A model that is capable o f predicting the thermal noise of both long and short channel devices in both the triode and saturation regions is presented. This model, wh ich can be easily implemented into existing simulators such as SPICE, has been verified by a wide variety of measurements.