NEW MICROFABRICATION TECHNIQUE BY SYNCHROTRON RADIATION-EXCITED ETCHING - USE OF NONCONTACT MASK ON A SUBMICROMETER SCALE

Authors
TERAKADO S GOTO T OGURA M KANEDA K KITAMURA O SUZUKI S
Citation
S. Terakado et al., NEW MICROFABRICATION TECHNIQUE BY SYNCHROTRON RADIATION-EXCITED ETCHING - USE OF NONCONTACT MASK ON A SUBMICROMETER SCALE, Applied physics letters, 64(13), 1994, pp. 1659-1661
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
13
Year of publication
1994
Pages
1659 - 1661
Database
ISI
SICI code
0003-6951(1994)64:13<1659:NMTBSR>2.0.ZU;2-7
Abstract
Synchrotron radiation (SR)-excited etching of Si using a noncontact ma sk on a submicrometer scale has been investigated. The blank pattern o f the noncontact mask was replicated on the etched surface and highly area-selective etching was realized at the size of approximately 0.4 m um. The spatial photointensity distribution of SR on the sample determ ined the depth profile of the etched part of the sample.