The solid phase reaction of gadolinium thin film and silicon substrate
was investigated in lateral growth geometry with the help of periodic
titanium protective stripes by optical microscopy. In the lateral rea
ction zone the shape of the interface between gadolinium and Gd silici
de was very complicated and showed pattern formation. This silicide gr
owth can be described as a kinetic process modified by the structure o
f the Gd film in contrast to the previously proposed simple nucleation
.