CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS/

Citation
Jp. Cheng et al., CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS/, Applied physics letters, 64(13), 1994, pp. 1681-1683
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
64
Issue
13
Year of publication
1994
Pages
1681 - 1683
Database
ISI
SICI code
0003-6951(1994)64:13<1681:CEOHIS>2.0.ZU;2-Z
Abstract
The Ge-composition dependence of cyclotron effective mass of quasi-two -dimensional holes in strained Si1-xGex/Si quantum well structures has been investigated by far-infrared magneto-optical spectroscopy at low temperatures and high magnetic fields up to 23 T. The in-plane effect ive mass determined from cyclotron resonance energies is much less tha n that of unstrained Si1-xGex alloys and decreases systematically from 0.40m(e) to 0.29m(e) as the Ge composition increases from x = 0.13 to x = 0.37, indicating the importance of the strain effect on the valen ce-band structure. The nonparabolicity correction is significant in ex plaining the discrepancy between the measured values and the calculate d band-edge masses.