Jp. Cheng et al., CYCLOTRON EFFECTIVE-MASS OF HOLES IN SI1-XGEX SI QUANTUM-WELLS - STRAIN AND NONPARABOLICITY EFFECTS/, Applied physics letters, 64(13), 1994, pp. 1681-1683
The Ge-composition dependence of cyclotron effective mass of quasi-two
-dimensional holes in strained Si1-xGex/Si quantum well structures has
been investigated by far-infrared magneto-optical spectroscopy at low
temperatures and high magnetic fields up to 23 T. The in-plane effect
ive mass determined from cyclotron resonance energies is much less tha
n that of unstrained Si1-xGex alloys and decreases systematically from
0.40m(e) to 0.29m(e) as the Ge composition increases from x = 0.13 to
x = 0.37, indicating the importance of the strain effect on the valen
ce-band structure. The nonparabolicity correction is significant in ex
plaining the discrepancy between the measured values and the calculate
d band-edge masses.