TEMPERATURE-DEPENDENT STUDY OF SPIN-DEPENDENT RECOMBINATION AT SILICON DANGLING BONDS

Electrical detection of magnetic resonance is used in a large temperat ure range (150-350 K) to analyze the spin-dependent recombination prop erties of silicon dangling bonds at the Si-SiO2 interface (created by high-field electron injections) and of silicon dangling bond clusters in bulk silicon (created by electron irradiations). Quite different te mperature spin-dependent recombination behaviors are observed for thes e two kinds of silicon dangling bonds. These features are related to t he respective behaviors of their nonradiative capture processes, which are independently determined by deep level transient spectroscopy. Mo reover, we show that only the P(b0) center is observed at the Si-SiO2 interface after high-field electron injection. The P(b1) center is not observed by electrically detected magnetic resonance in this large te mperature range.