FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL

Laterally gated three-terminal resonant tunneling devices have been fa bricated from Si/Si1-xGex double-barrier structures grown by atmospher ic pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the enti re fabrication scheme is compatible with current silicon technology. A t T = 77 K the resonant peak Current can be modulated by 25% by applyi ng a moderate gate voltage; at T = 4.2 K, current modulation reaches 5 0%. We present calculations demonstrating that devices fabricated from optimized Si/Si1-xGex structures will pinch off fully at moderate gat e voltages and operate at liquid nitrogen temperatures.