STRAINED IN0.40AL0.60AS WINDOW LAYERS FOR INDIUM-PHOSPHIDE SOLAR-CELLS

Authors
JAIN RK LANDIS GA WILT DM FLOOD DJ
Citation
Rk. Jain et al., STRAINED IN0.40AL0.60AS WINDOW LAYERS FOR INDIUM-PHOSPHIDE SOLAR-CELLS, Applied physics letters, 64(13), 1994, pp. 1708-1710
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
13
Year of publication
1994
Pages
1708 - 1710
Database
ISI
SICI code
0003-6951(1994)64:13<1708:SIWLFI>2.0.ZU;2-#
Abstract
The efficiency of indium phosphide solar cells might be improved by a wide-band-gap window layer. In this work we calculate the performance of InP solar cells with a strained (pseudomorphic) In0.40Al0.60As wind ow layer. Calculations show that the efficiencies of baseline and opti mized p+n cells are increased to more than 22% and 24% (AM0, 25-degree s-C), respectively, for In0.40Al0.60As window layer of 10 nm thickness . Comparatively little improvement is found for n+p cells.