NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE IN DELTA-DOPED DIODES GROWN BY SI-MOLECULAR BEAM EPITAXY

Authors
SARDELA MR RADAMSON HH HANSSON GV
Citation
Mr. Sardela et al., NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE IN DELTA-DOPED DIODES GROWN BY SI-MOLECULAR BEAM EPITAXY, Applied physics letters, 64(13), 1994, pp. 1711-1713
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
13
Year of publication
1994
Pages
1711 - 1713
Database
ISI
SICI code
0003-6951(1994)64:13<1711:NDRARI>2.0.ZU;2-C
Abstract
Negative differential resistance effects at room temperature in delta- doped diodes growth by silicon-molecular beam epitaxy are reported. Hi gh tunneling current densities (almost-equal-to 4 kA/cm2) and peak-to- value ratios close to 1.1 were achieved.