EFFECT OF TEMPERATURE AND ELECTRON-CONCENTRATION ON THE EFFECTIVE POLARIZABILITY OF 2DEG IN THE SILICON INVERSION LAYER FOR SURFACE-ROUGHNESS SCATTERING

Authors
BORZDOV VM KOMAROV FF PETROVICH TA VRUBEL MM ZHEVNYAK OG
Citation
Vm. Borzdov et al., EFFECT OF TEMPERATURE AND ELECTRON-CONCENTRATION ON THE EFFECTIVE POLARIZABILITY OF 2DEG IN THE SILICON INVERSION LAYER FOR SURFACE-ROUGHNESS SCATTERING, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000047-110000049
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
183
Issue
2
Year of publication
1994
Pages
110000047 - 110000049
Database
ISI
SICI code
0370-1972(1994)183:2<110000047:EOTAEO>2.0.ZU;2-8