THE FORMATION OF LUMINESCENCE-CENTERS IN SILICON-CRYSTALS AFTER ELECTRON-IRRADIATION AND ION-IMPLANTATION AT 20-K

The formation of radiation damage in silicon crystals after low-temper ature (20 to 25 K) electron irradiation or ion implantation is studied by the luminescence method. It is found that the carbon impurity atom s take an active part in the processes of interaction with primary rad iation defects at low temperatures. Implantation of carbon ions confir ms their participation in the formation processes of the luminescence centers corresponding to the 0.8559 eV electron-vibronic band. The ann ealing behavior in the temperature range from 20 to 400 K and its comp arison with EPR and IR absorption data on radiation damage suggest a c orrelation of the 0.8559 eV luminescence band with interstitial carbon atoms.