INVESTIGATION OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON

Citation
O. Schoenfeld et al., INVESTIGATION OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON, Physica status solidi. a, Applied research, 143(2), 1994, pp. 323-331
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
143
Issue
2
Year of publication
1994
Pages
323 - 331
Database
ISI
SICI code
0031-8965(1994)143:2<323:IOTTFA>2.0.ZU;2-A
Abstract
An attempt was made to crystallize amorphous silicon thin films into a microcrystalline structure. These films are prepared by dc magnetron sputtering onto quartz glass substrate for optical transmission measur ements and for structural studies. Observations of the changes in opti cal transmission data due to thermal annealing of the as-deposited fil ms allow us to investigate the amorphous to crystalline transition. X- ray diffraction and electron microscopic observations show the structu ral transition into a homogeneous microcrystalline state. The kinetic process parameters of nucleation and crystal growth are determined.