THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS

Authors
GOLUBOVIC S RISTIC G PEJOVIC M DIMITRIJEV S
Citation
S. Golubovic et al., THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS, Physica status solidi. a, Applied research, 143(2), 1994, pp. 333-339
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
143
Issue
2
Year of publication
1994
Pages
333 - 339
Database
ISI
SICI code
0031-8965(1994)143:2<333:TROITI>2.0.ZU;2-O
Abstract
Postirradiation effect measurements on NMOS Al-gate transistors are pe rformed. Rebound failures are demonstrated during the bias-thermal ann ealing. It is established that the interface traps, created during irr adiation, are responsible for rebound.