TRANSPORT PHENOMENA AND MODEL FOR LOCALIZED GAP STATES OF STRUCTURE-DISORDERED FILMS ON THE BASIS OF GERMANIUM TELLURIDE

Authors
MAKARENKO SV DUTSYAK IS MIKOLAYCHUK OG PAVLYSHYN AZ
Citation
Sv. Makarenko et al., TRANSPORT PHENOMENA AND MODEL FOR LOCALIZED GAP STATES OF STRUCTURE-DISORDERED FILMS ON THE BASIS OF GERMANIUM TELLURIDE, Physica status solidi. a, Applied research, 143(2), 1994, pp. 353-359
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
143
Issue
2
Year of publication
1994
Pages
353 - 359
Database
ISI
SICI code
0031-8965(1994)143:2<353:TPAMFL>2.0.ZU;2-V
Abstract
The structure and electron transport properties of the compounds (GeTe )1-x(R)x (where R = Y, Gd, Tb and x = 0 to 0.2) prepared as films and gamma-irradiated are investigated. The optical absorption coefficient, dc conductivity, stationary and non-stationary photoconductivity, dri ft carrier mobility, photoluminescence, ESR spectra are measured. The localized, states in the mobility of the initial a-GeTe and their vari ation with the composition changes and gamma-irradiation are studied o n the basis of experimental data and a suggested theoretical approach.