INFLUENCE OF IN-SITU PHOTOEXCITATION ON THE RADIATION DEFECT FORMATION IN ELECTRON-IRRADIATED SILICON

Authors
BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM
Citation
Sn. Boldyrev et al., INFLUENCE OF IN-SITU PHOTOEXCITATION ON THE RADIATION DEFECT FORMATION IN ELECTRON-IRRADIATED SILICON, Physica status solidi. a, Applied research, 143(2), 1994, pp. 110000071-110000074
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
143
Issue
2
Year of publication
1994
Pages
110000071 - 110000074
Database
ISI
SICI code
0031-8965(1994)143:2<110000071:IOIPOT>2.0.ZU;2-R