INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001)

Authors
LOHMEIER M DEVRIES S CUSTER JS VLIEG E FINNEY MS PRIOLO F BATTAGLIA A
Citation
M. Lohmeier et al., INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001), Applied physics letters, 64(14), 1994, pp. 1803-1805
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
14
Year of publication
1994
Pages
1803 - 1805
Database
ISI
SICI code
0003-6951(1994)64:14<1803:IRDTAI>2.0.ZU;2-K
Abstract
The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion-beam-induced epitaxial crystal lization (IBIEC), has been studied by measuring the scattered x-ray in tensity along crystal truncation rods close to Si bulk Bragg peaks. Fo r both regrowth methods, the interface region is well described by a d iscrete roughness profile. The root-mean-square roughnesses are compar able and rather small: 8.0+/-0.6 angstrom and 7.4+/-0.6 angstrom for t he SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.