HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES/

Authors
LALINSKY T GREGUSOVA D MOZOLOVA Z BREZA J VOGRINCIC P
Citation
T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES/, Applied physics letters, 64(14), 1994, pp. 1818-1820
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
14
Year of publication
1994
Pages
1818 - 1820
Database
ISI
SICI code
0003-6951(1994)64:14<1818:HSINSD>2.0.ZU;2-K
Abstract
We report on the excellent thermal stability of Ir-Al/GaAs Schottky co ntact based on sequentially evaporated Ir-Al bimetallic system with an aluminum concentration of approximately 25 at. %. The contact system is stable up to 950-degrees-C for 10 s (capless rapid thermal annealin g) and exhibits an enhancement of the barrier height with the temperat ure of annealing.