EMPTY STATE AND FILLED STATE IMAGE OF ZNGA ACCEPTOR IN GAAS STUDIED BY SCANNING-TUNNELING-MICROSCOPY

Authors
ZHENG ZF SALMERON MB WEBER ER
Citation
Zf. Zheng et al., EMPTY STATE AND FILLED STATE IMAGE OF ZNGA ACCEPTOR IN GAAS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 64(14), 1994, pp. 1836-1838
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
14
Year of publication
1994
Pages
1836 - 1838
Database
ISI
SICI code
0003-6951(1994)64:14<1836:ESAFSI>2.0.ZU;2-#
Abstract
Zn(Ga) acceptor atoms in the first to sixth layer below the GaAs (110) cleavage plane have been identified. For the first time, we find that the empty state scanning tunneling microscopy image of a Zn(Ga) accep tor is a characteristic equal latitude triangle-shaped feature of appr oximately 4 nm width with a (110) mirror plane. The filled state image , however, is a spherical feature of similar size. These unique featur es can be used as the signature for the identification Of Zn(Ga) in Ga As.