CEO2 - AN ALTERNATIVE INSULATOR MATERIAL FOR SUPERCONDUCTING FIELD-EFFECT DEVICES

The properties of high-T(c) superconducting field-effect devices using CeO2 as an insulating layer have been studied. The dielectric constan t and hence the achieved charge transfer for constant gate voltage and equivalent geometry is smaller as compared to the established SrTiO3 dielectric. This is mostly compensated by better insulating properties . The observed field effects for a fixed amount of charge transfer are very similar to those obtained with the SrTiO3 dielectric, indicating that the observed field effects are truly due to changes in the charg e carrier density and not due to field-induced stresses in the multila yer structure.