Jh. Xu et al., NOVEL YBA2CU3O7-X AND YBA2CU3O7-X Y4BA3O9 MULTILAYER FILMS BY BIAS-MASKED ON-AXIS MAGNETRON SPUTTERING, Applied physics letters, 64(14), 1994, pp. 1874-1876
In situ YBa2Cu3O7-x (YBCO) films have been fabricated on SrTiO3 (001)
and LaAlO3 (001) substrates by on-axis biased-radio-frequency magnetro
n sputtering in Ar-10% O2 at total pressures as low as 3 Pa (3 x 10(-2
) mbar) and a deposition rate 210 nm/h. Negative oxygen ion-resputteri
ng has been considerably reduced by introducing a biased copper mask b
etween the substrate and target. The surface morphology and physical p
roperties of the films are greatly improved on applying a positive dc
substrate bias with respect to the grounded deposition chamber. We hav
e obtained superconducting YBCO films with transport critical current
as high as 10(6) A/cm2 at 77 K and low normal-state resistivity by thi
s approach. Scanning tunneling microscopy analyses of the films with t
he best superconducting properties reveal a spiral growth mechanism. H
owever, films deposited by negative dc bias under identical sputtering
conditions are insulating. From x-ray theta-2theta and rocking curve
measurements, we identify the insulating films to be c-axis oriented Y
4Ba3O9 (YBO) films. Furthermore, YBCO films could be grown on the YBO
layers without any degradation of T(C) and c-axis orientation. This no
vel bias sputtering feature gives us a unique opportunity to produce s
uperconductor/insulator, YBCO/YBO, multilayers from a single YBCO targ
et.