Ek. Propst et al., LUMINESCENT CHARACTERISTICS OF A NOVEL POROUS SILICON STRUCTURE FORMED IN A NONAQUEOUS ELECTROLYTE, Applied physics letters, 64(15), 1994, pp. 1914-1916
Novel porous silicon layers which photoluminesce and electroluminesce
in an aqueous solution have been formed by oxidation of (100) silicon
in anhydrous acetonitrile-HF solutions. The novel porous structures co
nsisted of large, noninterconnected pores, 1-2 mum diam, which grew no
rmal to the surface. The pores were spaced 2-3 mum apart, and the leng
th, which could be over 150 mum, was dependent on etch time and curren
t density. Microporous structures (i.e., <100 nm), often associated wi
th luminescence from porous silicon, were not detected by TEM, SEM, or
infrared examination. The porous surface was hydride terminated, whic
h was critical to the luminescence process. Since water and oxygen wer
e not present during the formation of the porous structure and the por
es were relatively large, neither silicon-oxygen species (e.g., siloxe
nes) nor quantum size structures, appeared necessary for the generatio
n visible luminescence from porous silicon.