HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE GAMMA-FESI2 SI(111) INTERFACE

Authors
MULLER E GRINDATTO DP NISSEN HU ONDA N VONKANEL H
Citation
E. Muller et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE GAMMA-FESI2 SI(111) INTERFACE, Applied physics letters, 64(15), 1994, pp. 1938-1940
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
15
Year of publication
1994
Pages
1938 - 1940
Database
ISI
SICI code
0003-6951(1994)64:15<1938:HTESOT>2.0.ZU;2-Q
Abstract
The atomic structure of the B-type gamma-FeSi2/Si(111) interface has b een determined by high-resolution transmission electron microscopy com bined with dynamical calculations of the image contrast. Among four mo dels for the interface considered here, only one is found to agree wit h the observations. In this model the Fe atoms at the interface are bo nded to the substrate silicon atoms and 8-fold coordinated, as are the Co atoms in the case of CoSi2/Si(111), which is isostructural.