HETEROJUNCTION FABRICATION BY SELECTIVE-AREA CHEMICAL-VAPOR-DEPOSITION INDUCED BY SYNCHROTRON-RADIATION

Authors
BYUN DG HWANG SD DOWBEN PA PERKINS FK FILIPS F IANNO NJ
Citation
Dg. Byun et al., HETEROJUNCTION FABRICATION BY SELECTIVE-AREA CHEMICAL-VAPOR-DEPOSITION INDUCED BY SYNCHROTRON-RADIATION, Applied physics letters, 64(15), 1994, pp. 1968-1970
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
15
Year of publication
1994
Pages
1968 - 1970
Database
ISI
SICI code
0003-6951(1994)64:15<1968:HFBSC>2.0.ZU;2-P
Abstract
We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode b y the synchrotron radiation-induced decomposition of orthocarborane. T his diode can be compared with similar boron-carbide/Si(111) heterojun ction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postula ted to occur via the decomposition of weakly chemisorbed species and t he results suggest that ''real-time'' projection lithography (selectiv e area deposition) of boron-carbide devices is possible.