A highly nonlinear far-infrared free-carrier absorption, rising with t
he radiation intensity, has been observed in InSb. It is shown that th
e nonlinearity arises from an increase in the number of free carriers
caused by the generation of electron-hole pairs by light impact ioniza
tion in the radiation field of a powerful far-infrared laser. The obse
rved nonlinearity permits the investigation of the process of impact i
onization by a contactless optical method.