ELECTRON AND HOLE MOBILITIES IN LIGHTLY DOPED SILICON

The electron and hole mobilities were measured between 78 and 340 K. T he method used is based on the frequency dependence of the conductance and the capacitance of a high resistivity diode biased in high inject ion. The method is insensitive to uncertainties regarding the ionized dopant densities. In the temperature range from 170 to 340 K the carri er mobilities vary as T(-a), where a=2.34+/-0.08 for electrons while f or holes a=2.85+/-0.05. At 77.8 K the hole mobility is 14000+/-400 cm2 /V s while the electron mobility is 24000+/-800 cm2/V s.