NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE

Nanoscale patterning of the hydrogen terminated Si(100)-2x1 surface ha s been achieved with an ultrahigh vacuum scanning tunneling microscope . Patterning occurs when electrons field emitted from the probe locall y desorb hydrogen, converting the surface into clean silicon. Linewidt hs of 1 nm on a 3 nm pitch are achieved by this technique. Local chemi stry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surroundin g H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.