PHOTOELECTRON INTENSITY OSCILLATION DURING CHEMICAL-VAPOR-DEPOSITION ON SI(100) SURFACE WITH SI2H6

Authors
TAKAKUWA Y ENTA Y YAMAGUCHI T HORI T NIWANO M MIYAMOTO N ISHIDA H SAKAMOTO H NISHIMORI T
Citation
Y. Takakuwa et al., PHOTOELECTRON INTENSITY OSCILLATION DURING CHEMICAL-VAPOR-DEPOSITION ON SI(100) SURFACE WITH SI2H6, Applied physics letters, 64(15), 1994, pp. 2013-2015
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
15
Year of publication
1994
Pages
2013 - 2015
Database
ISI
SICI code
0003-6951(1994)64:15<2013:PIODCO>2.0.ZU;2-J
Abstract
We have found that the photoelectron intensity of the dimer-dangling-b ond-derived surface state on Si(100) shows a periodic oscillation duri ng chemical vapor deposition with Si2H6 gas. The substrate temperature and Si2H6-pressure dependence of the oscillation period was measured. By use of a selective-growth method using SiO2-patterned wafers, one oscillation period was clarified to correspond to the Si growth of one atomic layer of the Si(100) plane with a thickness of 1.36 angstrom.