HIGH CRITICAL-CURRENT DENSITY NBN ALN/NBN TUNNEL-JUNCTIONS FABRICATEDON AMBIENT-TEMPERATURE MGO SUBSTRATES/

Authors
WANG Z KAWAKAMI A UZAWA Y KOMIYAMA B
Citation
Z. Wang et al., HIGH CRITICAL-CURRENT DENSITY NBN ALN/NBN TUNNEL-JUNCTIONS FABRICATEDON AMBIENT-TEMPERATURE MGO SUBSTRATES/, Applied physics letters, 64(15), 1994, pp. 2034-2036
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
15
Year of publication
1994
Pages
2034 - 2036
Database
ISI
SICI code
0003-6951(1994)64:15<2034:HCDNAT>2.0.ZU;2-6
Abstract
NbN/AlN/NbN tunnel junctions are fabricated at ambient temperature on MgO substrates, and a critical current density of 8 kA/cm2 is obtained in junctions with 1.5-nm-thick AlN barriers. Even though the NbN/AlN/ NbN trilayers are deposited without intentional heating, the junctions show a large gap voltage (V(g)=5 mV), sharp quasiparticle current ris e (DELTAV(g)=0.16 mV), and small subgap leakage current (V(m)=25 mV an d R(sg)/R(N)=9). This report shows that high-quality NbN/AlN/NbN tunne l junctions can be made at ambient substrate temperature.