CHEMICAL AND COMPOSITIONAL CHANGES INDUCED BY ION-IMPLANTATION IN SICAND RESULTING HYDROGEN PERMEATION PROPERTIES

Citation
A. Miotello et al., CHEMICAL AND COMPOSITIONAL CHANGES INDUCED BY ION-IMPLANTATION IN SICAND RESULTING HYDROGEN PERMEATION PROPERTIES, Surface & coatings technology, 65(1-3), 1994, pp. 45-56
Citations number
45
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
65
Issue
1-3
Year of publication
1994
Pages
45 - 56
Database
ISI
SICI code
0257-8972(1994)65:1-3<45:CACCIB>2.0.ZU;2-H
Abstract
Crystalline SiC films are of technological interest because of potenti al applications in optoelectronics, in high-temperature semiconducting devices, as a fusion first-wall material (coated onto steel), and as a material with high wear resistance (again coated onto steel). Much o f the usefulness of crystalline SiC is preserved in the amorphous stat e, a-SiC. Many investigations have been directed towards the study of the structure and mechanical properties of this kind of amorphous film ; nevertheless, little is known about bombardment-induced chemical and compositional changes. Here we present an overview of observations an d interpretations relevant to bombardment-induced structural and compo sitional changes in SiC and other carbides. Particular emphasis is pla ced on N+-implantation, which leads to SiC(x)N(y) compounds with C bei ng gradually substituted with N. It is shown that N-implantation stron gly enhances the a-SiC-stainless steel adhesion by promoting the forma tion of new chemical bonds at the ceramic-metal interface. By examinin g data from the literature, we find more or less clear evidence for a number of radiation-induced transport processes. These include (a) Gib bsian segregation, (b) vaporization, (c) long-range forces such as tha t provided by unbalanced charges, (d) defect-induced transport, and (c ) preferential loss of C from the surface. These phenomena help to exp lain composition changes variously at or beneath the surface of SiC. W hen low to medium energy hydrogen collides with a carbide surface both chemical and transport-related processes occur. In the future generat ion of fusion reactors very high levels of tritium could be present in either a trapped or mobile form in walls and other internal parts. Th us tritium permeation even through thick wall materials may present pr oblems. The permeation of hydrogen through a-SiC films is discussed sh owing that it can be strongly affected by surface changes.