A. Miotello et al., CHEMICAL AND COMPOSITIONAL CHANGES INDUCED BY ION-IMPLANTATION IN SICAND RESULTING HYDROGEN PERMEATION PROPERTIES, Surface & coatings technology, 65(1-3), 1994, pp. 45-56
Crystalline SiC films are of technological interest because of potenti
al applications in optoelectronics, in high-temperature semiconducting
devices, as a fusion first-wall material (coated onto steel), and as
a material with high wear resistance (again coated onto steel). Much o
f the usefulness of crystalline SiC is preserved in the amorphous stat
e, a-SiC. Many investigations have been directed towards the study of
the structure and mechanical properties of this kind of amorphous film
; nevertheless, little is known about bombardment-induced chemical and
compositional changes. Here we present an overview of observations an
d interpretations relevant to bombardment-induced structural and compo
sitional changes in SiC and other carbides. Particular emphasis is pla
ced on N+-implantation, which leads to SiC(x)N(y) compounds with C bei
ng gradually substituted with N. It is shown that N-implantation stron
gly enhances the a-SiC-stainless steel adhesion by promoting the forma
tion of new chemical bonds at the ceramic-metal interface. By examinin
g data from the literature, we find more or less clear evidence for a
number of radiation-induced transport processes. These include (a) Gib
bsian segregation, (b) vaporization, (c) long-range forces such as tha
t provided by unbalanced charges, (d) defect-induced transport, and (c
) preferential loss of C from the surface. These phenomena help to exp
lain composition changes variously at or beneath the surface of SiC. W
hen low to medium energy hydrogen collides with a carbide surface both
chemical and transport-related processes occur. In the future generat
ion of fusion reactors very high levels of tritium could be present in
either a trapped or mobile form in walls and other internal parts. Th
us tritium permeation even through thick wall materials may present pr
oblems. The permeation of hydrogen through a-SiC films is discussed sh
owing that it can be strongly affected by surface changes.