EFFECTS OF ATOM ENERGY ON METAL-ON-METAL FILM NUCLEATION AND GROWTH

Molecular dynamics simulations of the deposition of f.c.c. metal films on f.c.c. metal substrates have been conducted using embedded-atom po tentials. The energies of atoms arriving at the substrate were varied over the range 0.1-40 eV. Substrate-film atom combinations have been c hosen to investigate the relationship of relative atomic sizes, atomic masses, and heats of mixing with the effects of atom arrival energy. The results were also compared with experimental data in the literatur e regarding the epitaxy of f.c.c. metal films on Ag and Cu substrates. In the simulations, the deposition of Pd, Ag, Pt, and Au was studied on Cu substrates, and deposition of Ni, Cu and Ag was examined on Ag s ubstrates. As had been noted previously for simulations of Ag depositi on on Ag substrates, atom arrival energies of 10 eV and greater result ed in some film-substrate interface mixing. The present results demons trated that this interface mixing effect could also be strongly influe nced by the chemical thermodynamics of the system. For 10 eV depositio ns of 4 monolayers on Cu(100) substrates, 1 Ag atom (0.005 ML), 4 Au a toms (0.02 ML), and 30 Pt atoms (0. 1 5 ML) were found mixed into the top substrate layer. Both experimental measurements and calculations u sing the potentials employed in this study show that, for mixing into a Cu host, the heat of solution is positive for Ag, slightly negative for Au, and significantly negative for Pt (3 times the magnitude for A u). In the investigation of heteroepitaxy, Ni and Cu deposited on Ag(1 00) substrates grew as (100)-oriented films, with their lattice parame ters expanded in the plane of the substrate. For oversize atoms deposi ted on Cu(100) substrates, it was found that increasing misfit was acc ommodated by shear along close-packed directions in the plane of the s ubstrate surface, producing stacking faults in the growing film. At su fficiently high misfit, these shear lines merge, producing a (111)-ori ented film. It is proposed that the experimental observation that Pd g rows on Cu(100) with a (100) orientation while Pt grows on the same su bstrate with a (111) orientation results from the higher initial densi ty of these faults, which makes it more energetically favorable for di slocations to shear the entire film to the (111) orientation as the th ickness increases.