NITRIDATION OF VANADIUM BY ION-BEAM IRRADIATION

Authors
KIUCHI M CHAYAHARA A KINOMURA A
Citation
M. Kiuchi et al., NITRIDATION OF VANADIUM BY ION-BEAM IRRADIATION, Surface & coatings technology, 65(1-3), 1994, pp. 142-147
Citations number
21
Categorie Soggetti
Materials Science, Coatings & Films
Journal title
Surface & coatings technology → ACNP
ISSN journal
02578972
Volume
65
Issue
1-3
Year of publication
1994
Pages
142 - 147
Database
ISI
SICI code
0257-8972(1994)65:1-3<142:NOVBII>2.0.ZU;2-S
Abstract
The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen io n implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. alpha-V, beta-V2N, and delta-V N. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is a lso discussed in comparison with that of titanium and chromium.