PREPARATION AND ION-IMPLANTATION OF SOLID C-60 FILMS

We report on the successful preparation of fullerenes (C60 + C70 mixtu re yield up to 13 %) by plasma discharge. After chromatography separat ion with hexane on alumina, 99.9% C60 has been obtained. Solid fullere ne films were deposited using an ionized cluster beam technique. The r elationship between the quality of the films and the technical conditi ons of the deposition was studied. Different kind of ions, such as Ar, N2+, O2+ and P+, were implanted into C60 solid films. Fourier transf orm IR was used to compare the implanted and unimplanted samples. The electrical conductivity of P+-implanted C60 films was measured in situ . Our preliminary results suggest that ion implantation offers a poten tial technology for investigating fullerene semiconductors.