INGAAS-GAAS-ALGAAS LATERALLY-COUPLED DISTRIBUTED-FEEDBACK (LC-DFB) RIDGE LASER-DIODE

Authors
MARTIN RD FOROUHAR S KEO S LANG RJ HUNSPERGER RG TIBERIO R CHAPMAN PF
Citation
Rd. Martin et al., INGAAS-GAAS-ALGAAS LATERALLY-COUPLED DISTRIBUTED-FEEDBACK (LC-DFB) RIDGE LASER-DIODE, Electronics Letters, 30(13), 1994, pp. 1058-1060
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
13
Year of publication
1994
Pages
1058 - 1060
Database
ISI
SICI code
0013-5194(1994)30:13<1058:ILD(R>2.0.ZU;2-B
Abstract
Results are presented on laterally-coupled distributed feedback (LC-DF B) ridge laser diodes. The epitaxial regrowth required in most distrib uted feedback devices is eliminated by using lateral evanescent coupli ng of the field to gratings etched along the sides of the ridge. A pul sed singlemode output power of 36mW per facet was achieved at 937.5nm with a sidemode suppression ratio (SMSR) of 30 dB for a 1.5mm cavity l ength. A pulsed threshold of 11mA, slope efficiency of 0.46 mW/mA per facet, and temperature sensitivity of 0.63angstrom/degrees-C were meas ured for a 250 mum cavity length LC-DFB.