LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE

Authors
YOO BS PARK HH LEE EH
Citation
Bs. Yoo et al., LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE, Electronics Letters, 30(13), 1994, pp. 1060-1061
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
13
Year of publication
1994
Pages
1060 - 1061
Database
ISI
SICI code
0013-5194(1994)30:13<1060:LCISLW>2.0.ZU;2-B
Abstract
The authors have obtained very low threshold current densities for InG aAs vertical-cavity surface-emitting lasers using a periodic gain acti ve structure. For a 40mum diameter device, the threshold current densi ty for room-temperature CW operation was as low as 380A/cm2 with light output power of more than 11mW.