VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/

Authors
KASUKAWA A IWAI N YAMANAKA N
Citation
A. Kasukawa et al., VERY HIGH CHARACTERISTIC TEMPERATURE AND CONSTANT DIFFERENTIAL QUANTUM EFFICIENCY 1.3-MU-M GAINASP INP STRAINED-LAYER QUANTUM-WELL LASERS BY USE OF TEMPERATURE-DEPENDENT REFLECTIVITY (TDR) MIRROR/, Electronics Letters, 30(13), 1994, pp. 1064-1065
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
13
Year of publication
1994
Pages
1064 - 1065
Database
ISI
SICI code
0013-5194(1994)30:13<1064:VHCTAC>2.0.ZU;2-J
Abstract
A very high characteristic temperature of 150K (25-70-degrees-C) or 45 0K (25-50-degrees-C) and almost constant differential quantum efficien cy operation were achieved in 1.3mum GaInAsP/InP strained-layer quantu m well lasers by the use of a novel temperature dependent reflectivity mirror composed of multiple quarter-wavelength thickness a-Si/SiO(x) dielectric films with quarter-wavelength shift in the centre.