INTERFACIAL ENERGIES PROVIDING A DRIVING-FORCE FOR GE SI HETEROEPITAXY/

Authors
HANSSON PO ALBRECHT M DORSCH W STRUNK HP BAUSER E
Citation
Po. Hansson et al., INTERFACIAL ENERGIES PROVIDING A DRIVING-FORCE FOR GE SI HETEROEPITAXY/, Physical review letters, 73(3), 1994, pp. 444-447
Citations number
16
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
73
Issue
3
Year of publication
1994
Pages
444 - 447
Database
ISI
SICI code
0031-9007(1994)73:3<444:IEPADF>2.0.ZU;2-F
Abstract
Epitaxy of Ge on Si(001) from undersaturated solutions demonstrates a novel principle: minimization of interfacial energy between solution a nd solid in a system provides the driving force for heteroepitaxy. Gro wth according to this principle leads to sharp heterointerfaces and Ge layers free of nucleation sites for dislocations. The relations of in terfacial and strain energy vary on the system's pathway towards self- termination of growth and determine the layer morphology.