Eea. Aal et Mm. Hefny, FORMATION OF BARRIER OXIDE FILM ON LEAD IN BORATE SOLUTIONS, Collection of Czechoslovak Chemical Communications, 59(6), 1994, pp. 1305-1310
Galvanostatic anodization of lead in borate solutions reveals that lea
d can form a barrier type oxide film. The rate of growth, R, fulfils t
he empirical relation, R = ai(b) within the current density i range fr
om 1.16 . 10(-4) to 3.19 . 10(-4) A cm-2. The magnitudes of the parame
ters a and b are 6.9 . 10(3) and 1.6, respectively, it has been found
that the high field approximation is applicable for the oxide growth o
n lead. The coefficients of the dependence of R on solution temperatur
e, T, pH and borate ion concentration, c, viz. (partial derivative R/p
artial derivative T), (partial derivative R/partial derivative pH) and
(partial derivative R/partial derivative log c) are -18 . 10(-4), -0.
13 and 0.41, respectively.