FORMATION OF BARRIER OXIDE FILM ON LEAD IN BORATE SOLUTIONS

Authors
Citation
Eea. Aal et Mm. Hefny, FORMATION OF BARRIER OXIDE FILM ON LEAD IN BORATE SOLUTIONS, Collection of Czechoslovak Chemical Communications, 59(6), 1994, pp. 1305-1310
Citations number
15
Categorie Soggetti
Chemistry
ISSN journal
00100765
Volume
59
Issue
6
Year of publication
1994
Pages
1305 - 1310
Database
ISI
SICI code
0010-0765(1994)59:6<1305:FOBOFO>2.0.ZU;2-R
Abstract
Galvanostatic anodization of lead in borate solutions reveals that lea d can form a barrier type oxide film. The rate of growth, R, fulfils t he empirical relation, R = ai(b) within the current density i range fr om 1.16 . 10(-4) to 3.19 . 10(-4) A cm-2. The magnitudes of the parame ters a and b are 6.9 . 10(3) and 1.6, respectively, it has been found that the high field approximation is applicable for the oxide growth o n lead. The coefficients of the dependence of R on solution temperatur e, T, pH and borate ion concentration, c, viz. (partial derivative R/p artial derivative T), (partial derivative R/partial derivative pH) and (partial derivative R/partial derivative log c) are -18 . 10(-4), -0. 13 and 0.41, respectively.