DEVELOPMENT OF THE SINGLE-ION BEAM-INDUCED CHARGE (SIBIC) IMAGING TECHNIQUE USING THE SINGLE-ION MICROPROBE SYSTEM

Authors
KOH M HARA K HORITA K SHIGETA B MATSUKAWA T KISHIDA A TANII T GOTO M OHDOMARI I
Citation
M. Koh et al., DEVELOPMENT OF THE SINGLE-ION BEAM-INDUCED CHARGE (SIBIC) IMAGING TECHNIQUE USING THE SINGLE-ION MICROPROBE SYSTEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 93(1), 1994, pp. 82-86
Citations number
9
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
93
Issue
1
Year of publication
1994
Pages
82 - 86
Database
ISI
SICI code
0168-583X(1994)93:1<82:DOTSBC>2.0.ZU;2-E
Abstract
In order to minimize image degradation of IBIC (ion beam induced charg e) during observation, the single ion beam induced charge (SIBIC) imag ing technique has been developed by using a single ion microprobe, whi ch enables us to hit a particular site of a device with single ions on e by one. With only five He single ions per pixel, we have succeeded i n obtaining reasonable quality images of an active area of a device. S ince the number of defects induced by five single ions is quite low, t he irradiated device was still alive for subsequent process and device diagnoses.