WANNIER-STARK LOCALIZATION IN A SUPERLATTICE OF HEXAGONAL SILICON-CARBIDE

Citation
Vi. Sankin et Ia. Stolichnov, WANNIER-STARK LOCALIZATION IN A SUPERLATTICE OF HEXAGONAL SILICON-CARBIDE, JETP letters, 59(10), 1994, pp. 744-748
Citations number
17
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
59
Issue
10
Year of publication
1994
Pages
744 - 748
Database
ISI
SICI code
0021-3640(1994)59:10<744:WLIASO>2.0.ZU;2-M
Abstract
A negative differential resistance with threshold fields of 500, 1200, and 2000 kV/cm and also a resonant tunneling with a threshold field o f 1800 kV/cm have been observed in a hexagonal crystal with a natural 6H-SiC superlattice. Analysis of the experimental data shows that thes e effects can be regarded as manifestations of Wannier-Stark states wi th various degrees of localization. These results support the position that Wannier-Stark ''ladders'' exist. This position has come under do ubt because of the possibility of an interband mixing of electron stat es by an electric field.