CuIn(S1-xSex)2 thin films with x = 0.0, 0.3, 0.5, 0.7, 0.9 and 1.0 hav
e been prepared by a spray pyrolysis method. The films have been found
to be p-type, single phase, near stoichiometric and chalcopyrite in s
tructure. The activation energies of these films are determined from e
lectrical conductivity data. The possible defect levels are V(In) and
Cu(In). No Hall voltage is detected in CuIn(S1-xSex)2 thin films in th
e entire range.