IMPLANTATION-INDUCED STRUCTURAL-CHANGES IN EVAPORATED AMORPHOUS-GE

The short-range structure of amorphous germanium in the as-evaporated state and after Sb-ion implantation was investigated by x-ray diffract ion. Significant changes were detected in the structure factors of the two specimens. Reverse Monte Carlo analyses of both data were carried out. An increase of 12-15% in the atomic number density due to implan tation was established. The diffraction data are consistent both with an atomic arrangement where the originally defective structure becomes nearly perfect as a consequense of the ion bombardment, or with the f ormation of a new phase of alpha-Ge with an average first coordination number higher than 4.