Spatial variations of the local density of states (LDOS) near the Ferm
i level have been observed on the layered dichalcogenides 1T-TaS2-xSex
(x = 0, 0.2, 2) for the first time. The tunneling spectra on the clea
ved surfaces were measured by atomic-site tunneling (AST) spectroscopy
technique at room temperature. In 1T-TaS2, the LDOS was substantially
different among the three inequivalent Ta atomic sites induced by the
CDW formation. However, the surface electronic structure became homog
eneous, as the Se content was increased. By substituting Se for S, the
minimum position of the LDOS was systematically shifted to a higher e
nergy side above the Fermi level.