ELECTRON TRANSMISSION PROBABILITY ACROSS COSI2 N-SI(111) INTERFACES MEASURED WITH A SCANNING TUNNELING MICROSCOPE/

Authors
LEE EY SIRRINGHAUS H VONKANEL H
Citation
Ey. Lee et al., ELECTRON TRANSMISSION PROBABILITY ACROSS COSI2 N-SI(111) INTERFACES MEASURED WITH A SCANNING TUNNELING MICROSCOPE/, Surface science, 314(1), 1994, pp. 120000823-120000828
Citations number
28
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
314
Issue
1
Year of publication
1994
Pages
120000823 - 120000828
Database
ISI
SICI code
0039-6028(1994)314:1<120000823:ETPACN>2.0.ZU;2-Z
Abstract
In an in situ UHV study at 77 K, a scanning tunneling microscope was u sed in a new constant-height mode of ballistic-electron-emission micro scopy to measure the electron transmission probability across epitaxia l CoSi2 films and across CoSi2/n-Si(111) interfaces. The conventional ballistic-electron-emission microscopy, carried out in the constant-cu rrent mode, was found to give artifacts at high tip voltages (< - 2 V with sample grounded), which could be eliminated in the constant-heigh t mode with simultaneous scanning tunneling spectroscopy.