HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES ON THE INTERACTION OF O2 WITH SI(111)-(7X7) SURFACES

The interaction of O2 with Si(111)-(7 x 7) surfaces in the pressure ra nge between 5 x 10(-7) and 5 x 10(-4) Pa was investigated in situ, at reaction temperatures between 850 and 1130 K, by scanning tunneling mi croscopy. The range of experimental parameters includes the active oxi dation regime (high temperature O2 etching), the transition to passive oxidation (thermal oxide growth) and reaches into the latter regime. In the active oxidation regime the reaction proceeds via a step flow m ode, where Si is effectively removed at the edges of retracting terrac es or via nucleation and lateral growth of two-dimensional holes in th e topmost bilayer in the inner areas of extended terraces. Examination of the step propagation velocity for different O2 pressures, sample t emperatures and local terrace widths shows that this velocity is propo rtional to the O2 pressure and the terrace width and independent of te mperature. The vertical etch rate r(v), in contrast, depends only line arly on the O2 pressure and is independent of the other two parameters . No O(ad) is present on the surface under these conditions. These fin dings are consistent only with a mechanism involving oxygen adsorption and SiO formation on the entire terraces and subsequent mass transpor t via diffusion of vacancies in the Si surface layer, which are finall y incorporated at steps or in vacancy islands (vacancy diffusion model ). Other models proposed or discussed earlier can be ruled out. At hig her pressures, in a distinct transition regime, oxide growth begins by heterogeneous nucleation of small oxide clusters at steps and (7 x 7) domain boundaries, simultaneously with the ongoing etch process. Thes e clusters, which are often lined up along the above defects, stabiliz e steps against etching and can act as a barrier for moving steps. Aft er removal of the first Si bilayer the step flow process is effectivel y stopped and further reaction proceeds via slow growth of the oxide c overed areas and simultaneous Si removal in between those areas. Under reaction conditions where few oxide clusters are formed, the ongoing etch process leads to an apparent three-dimensional growth of the oxid e features. For conditions well in the passive oxidation regime homoge neous nucleation of small oxide clusters (20 angstrom width) on the te rraces sets in, in addition to the other two reaction paths. It is fou nd to be the dominant process and leads to surfaces covered by a layer of these small oxide clusters. The high density of these features poi nts to a short diffusion length and hence to a low mobility of the O a datoms, different from the high mobility of the vacancies at these tem peratures.