Tight-binding band structure calculations of the extended Huckel type
are used to model transition-metal-aluminum nitride interfaces. Two di
fferent interactions are found to be the determinant factors for the a
dhesion of transition-metals to these ceramics. On the one hand metal-
donor (surface nitrogen) interactions are found to be repulsive. These
are especially important for interfaces formed with late transition-m
etals since the almost filled d bands result in high energy destabiliz
ing metal-ceramic antibonding orbitals. Surface aluminum atoms with da
ngling bond states acting as electron acceptors toward the metal seem
to be responsible for the adhesion by strong formation of metal-alumin
um bonds. The basic features of adhesion to aluminum oxide described e
arlier seem to be also applicable to aluminum nitride, providing thus
a generalized description of the adhesion of transition-metals to cera
mics.