STUDY OF ENERGY STRAGGLING AND MULTIPLE-SCATTERING IN SILICON MICROSTRIP DETECTORS

The performance of silicon microstrip detectors in electron and pion b eams of momenta up to 50 GeV has been studied, Results are compared to full GEANT simulations. The energy loss straggling in silicon wafers is compared to the Urban and PAI models, Productions of delta-ray elec trons and electron-positron pairs by 50 GeV electrons, seen as multi-c luster events, are compared to GEANT calculations, The spatial resolut ion is determined with the detector intrinsic resolution simulated by Gaussian smearing and the multiple scattering calculated by Moliere th eory. The deflection due to multiple scattering in crystalline structu re was investigated by placing a GaAs wafer at various angles between active detectors, Larger deflection is seen in data of inclined tracks at 45 degrees to the silicon crystalline plane.