H. Yanagisawa et al., DIFFUSION BARRIER EFFECTS OF AL3ZR ZR BILAYERED FILMS INTERPOSED BETWEEN AL AND SI/, Electronics & communications in Japan. Part 2, Electronics, 79(9), 1996, pp. 63-69
The interfacial solid-phase reactions taking place in the Al/Al3Zr/Zr/
Si contact systems have been investigated to evaluate the effectivenes
s of Al3Zr/Zr bilayered films its a diffusion barrier in Al-metallizat
ion technology. The interposition of an intermediate Al3Zr layer can s
uccessfully suppress the possible spontaneous rections between the Al
and Zr layers because nearly-minimum free energy states are realized a
t interfaces of both Al/Al3Zr and Al3Zr/Zr. It is revealed that the pr
esent system tolerates heat treatment at temperatures of up to 470 deg
rees C and the formation of a Zr-silicide layer is observed at the Zr/
Si interface after heat treatment in the temperature range of 450 simi
lar to 470 degrees C.