DIFFUSION BARRIER EFFECTS OF AL3ZR ZR BILAYERED FILMS INTERPOSED BETWEEN AL AND SI/

Citation
H. Yanagisawa et al., DIFFUSION BARRIER EFFECTS OF AL3ZR ZR BILAYERED FILMS INTERPOSED BETWEEN AL AND SI/, Electronics & communications in Japan. Part 2, Electronics, 79(9), 1996, pp. 63-69
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
8756663X
Volume
79
Issue
9
Year of publication
1996
Pages
63 - 69
Database
ISI
SICI code
8756-663X(1996)79:9<63:DBEOAZ>2.0.ZU;2-T
Abstract
The interfacial solid-phase reactions taking place in the Al/Al3Zr/Zr/ Si contact systems have been investigated to evaluate the effectivenes s of Al3Zr/Zr bilayered films its a diffusion barrier in Al-metallizat ion technology. The interposition of an intermediate Al3Zr layer can s uccessfully suppress the possible spontaneous rections between the Al and Zr layers because nearly-minimum free energy states are realized a t interfaces of both Al/Al3Zr and Al3Zr/Zr. It is revealed that the pr esent system tolerates heat treatment at temperatures of up to 470 deg rees C and the formation of a Zr-silicide layer is observed at the Zr/ Si interface after heat treatment in the temperature range of 450 simi lar to 470 degrees C.