SHALLOW ACCEPTORS IN GE GESI STRAINED MULTILAYER HETEROSTRUCTURES WITH QUANTUM-WELLS/

Citation
Vi. Gavrilenko et al., SHALLOW ACCEPTORS IN GE GESI STRAINED MULTILAYER HETEROSTRUCTURES WITH QUANTUM-WELLS/, JETP letters, 65(2), 1997, pp. 209-214
Citations number
13
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
65
Issue
2
Year of publication
1997
Pages
209 - 214
Database
ISI
SICI code
0021-3640(1997)65:2<209:SAIGGS>2.0.ZU;2-B
Abstract
The impurity photoconductivity spectra of Ge/Ge1-xSix strained heteros tructures with quantum wells are investigated. It is established that the built-in deformation in quantum-size Ge layers substantially chang es the spectrum of shallow accepters, shifting it into the long-wavele ngth region of the far-IR range. In strong magnetic fields the photoco nductivity lines are observed to split and shift as a function of the field. This makes it possible to carry out a classification of the tra nsitions. (C) 1997 American Institute of Physics.