THE PLASMA CHARACTERISTICS AND FILM FORMATION GENERATED BY THE ELECTRON-CYCLOTRON-RESONANCE MECHANISM

Silicon nitride thin film (SiN(x)) is deposited onto the 3 inch silico n wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from N2-SiR4 electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determin ed by optical emission spectroscopy. From the comparison of the unifor mities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is rel ated to that of radical density rather than plasma density. The depend ence of the uniformity film thickness on the waveguide mode was also e xamined.